Boosting the Electrochemical Performance of Li1.2Mn0.54Ni0.13Co0.13O2 by Atomic Layer-Deposited CeO2 Coating

被引:39
作者
Gao, Yan [1 ]
Patel, Rajankumar L. [1 ,3 ]
Shen, Kuan-Yu [2 ]
Wang, Xiaofeng [1 ]
Axelbaum, Richard L. [2 ]
Liang, Xinhua [1 ]
机构
[1] Missouri Univ Sci & Technol, Dept Chem & Biochem Engn, Rolla, MO 65409 USA
[2] Washington Univ, Dept Energy Environm & Chem Engn, One Brookings Dr, St Louis, MO 63130 USA
[3] Pacific Northwest Natl Lab, Energy & Environm Directorate, Richland, WA 99354 USA
基金
美国国家科学基金会;
关键词
NICKEL-MANGANESE-OXIDES; ION BATTERY CATHODE; SURFACE MODIFICATION; HIGH-CAPACITY; PHASE-TRANSFORMATION; SPINEL PHASE; IN-SITU; MN; ELECTRODES; IMPROVEMENT;
D O I
10.1021/acsomega.7b01922
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It has been demonstrated that atomic layer deposition (ALD) provides an initially safeguarding, uniform ultrathin film of controllable thickness for lithium-ion battery electrodes. In this work, CeO2 thin films were deposited to modify the surface of lithium-rich Li1.2Mn0.54Ni0.13Co0.13O2 (LRNMC) particles via ALD. The film thicknesses were measured by transmission electron microscopy. For electro-chemical performance, similar to 2.5 nm CeO2 film, deposited by 50 ALD cycles (50Ce), was found to have the optimal thickness. At a 1 C rate and 55 degrees C in a voltage range of 2.0-4.8 V, an initial capacity of 199 mAh/g was achieved, which was 8% higher than that of the uncoated (UC) LRNMC particles. Also, 60.2% of the initial capacity was retained after 400 cycles of charge-discharge, compared to 22% capacity retention of UC after only 180 cycles of charge-discharge. A robust kinetic of electrochemical reaction was found on the CeO2-coated samples at 55 degrees C through electrochemical impedance spectroscopy. The conductivity of 50Ce was observed to be around 3 times higher than that of UC at 60-140 degrees C. The function of the CeO2 thin-film coating was interpreted as being to increase substrate conductivity and to block the dissolution of metal ions during the charge-discharge process.
引用
收藏
页码:906 / 916
页数:11
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