Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

被引：3

作者：

Akchurin, R. Kh. ^{[1
]}

Berliner, L. B. ^{[1
]}

Boginskaya, I. A. ^{[1
]}

Gordeev, E. G. ^{[1
]}

Egorova, E. V. ^{[1
]}

Marmalyuk, A. A. ^{[2
]}

Ladugin, M. A. ^{[2
]}

Surnina, M. A. ^{[1
]}

机构：

[1] Lomonosov State Univ Fine Chem Technol, Moscow 119573, Russia

[2] OOO Sigm Plus, Moscow 117342, Russia

来源：

TECHNICAL PHYSICS | 2014年 / 59卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

SYSTEM; GAAS;

D O I：

10.1134/S1063784214010034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted. An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated, and the thickness and composition of crystallizing In-Ga-As solid solution are calculated. It is shown that the size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate surface and deposition conditions.

引用

页码：78 / 84

页数：7

共 22 条

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