Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide

被引：97

作者：

Quackenbush, N. F. ^{[1
]}

Tashman, J. W. ^{[2
]}

Mundy, J. A. ^{[3
]}

Sallis, S. ^{[4
]}

Paik, H. ^{[2
]}

Misra, R. ^{[5
,6
]}

Moyer, J. A. ^{[7
]}

Guo, J. -H. ^{[8
]}

Fischer, D. A.

Woicik, J. C. ^{[9
]}

Muller, D. A. ^{[3
,10
]}

Schlom, D. G. ^{[2
,10
]}

Piper, L. F. J. ^{[1
,4
]}

机构：

[1] SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[4] SUNY Binghamton, Binghamton, NY 13902 USA

[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[6] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[7] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[8] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[9] NIST, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA

[10] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 10期

关键词：

VO2; metal insulator transition; X-ray spectroscopy; transition metal oxides; ultrathin films; MOTT TRANSITION; THIN-FILMS; VO2; PHASE; XPS;

D O I：

10.1021/nl402716d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have combined hard X-ray photoelectron spectroscopy with angular dependent O K-edge and V L-edge X-ray absorption spectroscopy to study the electronic structure of metallic and insulating end point phases in 4.1 nm thick (14 units cells. along the c-axis of VO2) films on TiO2(001) substrates, each displaying an abrupt MIT centered at 300 K with width <20 K and a resistance change of Delta R/R > 10(3). The dimensions, quality of the films, and stoichiometry were confirmed by a combination of scanning transmission electron microscopy with electron energy loss spectroscopy, X-ray spectroscopy, and resistivity measurements. The measured end point phases agree with their bulk counterparts. This clearly shows that, apart from the strain induced change in transition temperature, the underlying mechanism of the MIT for technologically relevant dimensions must be the same as the bulk for this orientation.

引用

页码：4857 / 4861

页数：5

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