Growth, disorder, and physical properties of ZnSnN2

被引:111
作者
Feldberg, N. [1 ]
Aldous, J. D. [1 ]
Linhart, W. M. [2 ,3 ]
Phillips, L. J. [2 ,3 ]
Durose, K. [2 ,3 ]
Stampe, P. A. [4 ]
Kennedy, R. J. [4 ]
Scanlon, D. O. [5 ]
Vardar, G. [6 ]
Field, R. L., III [6 ]
Jen, T. Y. [6 ]
Goldman, R. S. [6 ]
Veal, T. D. [2 ,3 ]
Durbin, S. M. [1 ,7 ]
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England
[3] Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England
[4] Florida A&M Univ, Dept Phys, Tallahassee, FL 32307 USA
[5] UCL, Dept Chem, London WC1H 0AJ, England
[6] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[7] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
基金
美国国家科学基金会; 英国工程与自然科学研究理事会;
关键词
ZNGEN2; DYNAMICS; ZNSIN2; FILMS;
D O I
10.1063/1.4816438
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examine ZnSnN2, a member of the class of materials contemporarily termed "earth-abundant element semiconductors," with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:5
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