Channeling and Radiation of Electrons in Silicon Single Crystals and Si1-xGex Crystalline Undulators

被引：24

作者：

Backe, H. ^{[1
]}

Krambrich, D. ^{[1
]}

Lauth, W. ^{[1
]}

Andersen, K. K. ^{[2
]}

Hansen, J. Lundsgaard ^{[2
]}

Uggerhoj, Ulrik I. ^{[2
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Nucl Phys, D-55099 Mainz, Germany

[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus, Denmark

来源：

INTERNATIONAL CONFERENCE ON DYNAMICS OF SYSTEMS ON THE NANOSCALE (DYSON 2012) | 2013年 / 438卷

关键词：

ELECTROMAGNETIC-RADIATION; CHARGED-PARTICLES; POSITRONS; EMISSION;

D O I：

10.1088/1742-6596/438/1/012017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The phenomenon of channeling and the basic features of channeling radiation emission are introduced in a pedestrian way. Both, radiation spectra as well as dechanneling length measurements at electron beam energies between 195 and 855 MeV feature quantum state phenomena for the (110) planar potential of the silicon single crystals. Radiation from a crystalline undulator, produced at the Aarhus University (UAAR), has been investigated at the Mainz Microtron electron accelerator facility MAMI. The 4-period epitaxially grown strained layer Si1-xGex undulator had a period length lambda(u)=9.9 mu m. At a beam energy of 375 MeV a broad excess yield around the theoretically expected photon energy of 0.132 MeV has been observed. Model calculations on the basis of synchrotron-like radiation emission suggest that evidence for a weak undulator effect has been observed.

引用

页数：15

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