Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

被引：60

作者：

Dimakis, E

Iliopoulos, E

Tsagaraki, K

Adikimenakis, A

Georgakilas, A

机构：

[1] Univ Crete, Dept Phys, Microelect Res Grp, Iraklion 71003, Greece

[2] FORTH, IESL, Iraklion 71110, Greece

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2202136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a systematic study, using high resolution x-ray diffraction, of the in-plane a and out-of-plane c lattice parameters of high quality InN films grown by molecular beam epitaxy on GaN/Al2O3 (0001) substrates. It is found that their values are dependent on the nucleation and growth conditions. Films nucleated in a two- or three-dimensional growth mode exhibit biaxial compressive or tensile strain, respectively. The linear dependence of c on a is consistent with biaxial strain being present in the films. A biaxial strain relaxation coefficient of 0.43 +/- 0.04 is deduced. The values of the lattice constants for the case of strain-free InN are estimated to be in the ranges c=5.699 +/- 0.004 A and a=3.535 +/- 0.005 A. (c) 2006 American Institute of Physics.

引用

页数：3

共 21 条

[11] X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method [J].

Herres, N ;

Kirste, L ;

Obloh, H ;

Köhler, K ;

Wagner, J ;

Koidl, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 :425-432

[12] Acceptor states in the photoluminescence spectra of n-InN -: art. no. 195207 [J].

Klochikhin, AA ;

Davydov, VY ;

Emtsev, VV ;

Sakharov, AV ;

Kapitonov, VA ;

Andreev, BA ;

Lu, H ;

Schaff, WJ .

PHYSICAL REVIEW B, 2005, 71 (19)

[13] PREPARATION AND PROPERTIES OF III-V NITRIDE THIN-FILMS [J].

KUBOTA, K ;

KOBAYASHI, Y ;

FUJIMOTO, K .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2984-2988

[14] Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD [J].

Maleyre, B ;

Ruffenach, S ;

Briot, O ;

van der Lee, A .

SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) :527-535

[15]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P595

[16] Optical properties of InN - the bandgap question [J].

Monemar, B ;

Paskov, PP ;

Kasic, A .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) :38-56

[17] Recent development of InN RF-MBE growth and its structural and property characterization [J].

Nanishi, Y ;

Saito, Y ;

Yamaguchi, T ;

Araki, T ;

Miyajima, T ;

Naoi, H .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6, 2004, 1 (06) :1487-1495

[18] Rietveld refinement for indium nitride in the 105-295 K range [J].

Paszkowicz, W ;

Cerny, R ;

Krukowski, S .

POWDER DIFFRACTION, 2003, 18 (02) :114-121

[19] Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium [J].

Paszkowicz, W ;

Adamczyk, J ;

Krukowski, S ;

Leszczynski, M ;

Porowski, S ;

Sokolowski, JA ;

Michalec, M ;

Lasocha, W .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1999, 79 (05) :1145-1154

[20]

SCHELEG AU, 1976, VESTSI AKAD NAUK BSS, V3, P126

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