Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

被引：60
作者：
Dimakis, E
Iliopoulos, E
Tsagaraki, K
Adikimenakis, A
Georgakilas, A
机构：
[1] Univ Crete, Dept Phys, Microelect Res Grp, Iraklion 71003, Greece
[2] FORTH, IESL, Iraklion 71110, Greece
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2202136
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a systematic study, using high resolution x-ray diffraction, of the in-plane a and out-of-plane c lattice parameters of high quality InN films grown by molecular beam epitaxy on GaN/Al2O3 (0001) substrates. It is found that their values are dependent on the nucleation and growth conditions. Films nucleated in a two- or three-dimensional growth mode exhibit biaxial compressive or tensile strain, respectively. The linear dependence of c on a is consistent with biaxial strain being present in the films. A biaxial strain relaxation coefficient of 0.43 +/- 0.04 is deduced. The values of the lattice constants for the case of strain-free InN are estimated to be in the ranges c=5.699 +/- 0.004 A and a=3.535 +/- 0.005 A. (c) 2006 American Institute of Physics.
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页数：3
相关论文
共 21 条
[1]  
Akasaki I., 1994, PROPERTIES GROUP 3 N, P30
[2]   Stress and defect control in GaN using low temperature interlayers [J].
Amano, H ;
Iwaya, M ;
Kashima, T ;
Katsuragawa, M ;
Akasaki, I ;
Han, J ;
Hearne, S ;
Floro, JA ;
Chason, E ;
Figiel, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B) :L1540-L1542
[3]   Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy [J].
Amimer, K ;
Georgakilas, A ;
Androulidaki, M ;
Tsagaraki, K ;
Pavelescu, M ;
Mikroulis, S ;
Constantinidis, G ;
Arbiol, J ;
Peiro, F ;
Cornet, A ;
Calamiotou, M ;
Kuzmik, J ;
Davydov, VY .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :304-308
[4]   The role of high-temperature island coalescence in the development of stresses in GaN films [J].
Böttcher, T ;
Einfeldt, S ;
Figge, S ;
Chierchia, R ;
Heinke, H ;
Hommel, D ;
Speck, JS .
APPLIED PHYSICS LETTERS, 2001, 78 (14) :1976-1978
[5]  
Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
[6]  
2-O
[7]   Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy [J].
Dimakis, E ;
Iliopoulos, E ;
Tsagaraki, K ;
Kehagias, T ;
Komninou, P ;
Georgakilas, A .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
[8]   Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy [J].
Dimakis, E ;
Iliopoulos, E ;
Tsagaraki, K ;
Georgakilas, A .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3
[9]   Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001) [J].
Dimakis, E ;
Tsagaraki, K ;
Iliopoulos, E ;
Komninou, P ;
Kehagias, T ;
Delimitis, A ;
Georgakilas, A .
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :367-372
[10]   The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy [J].
Dimakis, E ;
Konstantinidis, G ;
Tsagaraki, K ;
Adikimenakis, A ;
Iliopoulos, E ;
Georgakilas, A .
SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) :497-507
123