Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

被引：59
作者：
Dimakis, E
Iliopoulos, E
Tsagaraki, K
Adikimenakis, A
Georgakilas, A
机构：
[1] Univ Crete, Dept Phys, Microelect Res Grp, Iraklion 71003, Greece
[2] FORTH, IESL, Iraklion 71110, Greece
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2202136
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a systematic study, using high resolution x-ray diffraction, of the in-plane a and out-of-plane c lattice parameters of high quality InN films grown by molecular beam epitaxy on GaN/Al2O3 (0001) substrates. It is found that their values are dependent on the nucleation and growth conditions. Films nucleated in a two- or three-dimensional growth mode exhibit biaxial compressive or tensile strain, respectively. The linear dependence of c on a is consistent with biaxial strain being present in the films. A biaxial strain relaxation coefficient of 0.43 +/- 0.04 is deduced. The values of the lattice constants for the case of strain-free InN are estimated to be in the ranges c=5.699 +/- 0.004 A and a=3.535 +/- 0.005 A. (c) 2006 American Institute of Physics.
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页数：3
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共 21 条
  • [1] Akasaki I., 1994, PROPERTIES GROUP 3 N, P30
  • [2] Stress and defect control in GaN using low temperature interlayers
    Amano, H
    Iwaya, M
    Kashima, T
    Katsuragawa, M
    Akasaki, I
    Han, J
    Hearne, S
    Floro, JA
    Chason, E
    Figiel, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B): : L1540 - L1542
  • [3] Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
    Amimer, K
    Georgakilas, A
    Androulidaki, M
    Tsagaraki, K
    Pavelescu, M
    Mikroulis, S
    Constantinidis, G
    Arbiol, J
    Peiro, F
    Cornet, A
    Calamiotou, M
    Kuzmik, J
    Davydov, VY
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 304 - 308
  • [4] The role of high-temperature island coalescence in the development of stresses in GaN films
    Böttcher, T
    Einfeldt, S
    Figge, S
    Chierchia, R
    Heinke, H
    Hommel, D
    Speck, JS
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (14) : 1976 - 1978
  • [5] Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
  • [6] 2-O
  • [7] Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
    Dimakis, E
    Iliopoulos, E
    Tsagaraki, K
    Kehagias, T
    Komninou, P
    Georgakilas, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [8] Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy
    Dimakis, E
    Iliopoulos, E
    Tsagaraki, K
    Georgakilas, A
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (13) : 1 - 3
  • [9] Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)
    Dimakis, E
    Tsagaraki, K
    Iliopoulos, E
    Komninou, P
    Kehagias, T
    Delimitis, A
    Georgakilas, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 367 - 372
  • [10] The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy
    Dimakis, E
    Konstantinidis, G
    Tsagaraki, K
    Adikimenakis, A
    Iliopoulos, E
    Georgakilas, A
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) : 497 - 507
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