High dielectric constant Hf-Sn-Ti-O thin films

被引：55

作者：

Schneemeyer, LF ^{[1
]}

van Dover, RB ^{[1
]}

Fleming, RM ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 13期

关键词：

D O I：

10.1063/1.124887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250 degrees C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/mu m(2). Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit epsilon epsilon(0)E(br) similar to 19 mu C/cm(2). Leakage currents, measured at 1 MV/cm, were in the range 10(-7)-10(-6) A/cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)03739-0].

引用

页码：1967 / 1969

页数：3

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