Study on the influence of recombination velocity to quantum efficiency of reflection-mode GaAs photocathode

被引：4

作者：

Fu, Jiang-Tao ^{[1
]}

Zheng, Guo-Qiang ^{[1
]}

Zhang, Song-Chun ^{[1
]}

机构：

[1] Henan Univ Sci & Technol, Coll Elect Informat Engn, Luoyang 471000, Henan, Peoples R China

来源：

OPTIK | 2013年 / 124卷 / 14期

关键词：

Recombination velocity; GaAs; Photocathode; Quantum efficiency;

D O I：

10.1016/j.ijleo.2012.06.027

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The experiment result of American ITT company shows that the quick recombination velocity on the front surface of GaAs photocathode affects the quantum efficiency seriously. In order to explain this phenomenon theoretically, the quantum efficiency formula which include front surface recombination velocity is firstly deduced for reflection-mode GaAs photocathode by using integral deduction method, realize the evaluation of the photocathode parameters which cannot be detected directly, especially the quantum efficiency, provide a guidance to further study GaAs photocathode. (C) 2012 Elsevier GmbH. All rights reserved.

引用

页码：1862 / 1864

页数：3

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