High power output and temperature characteristics of 1.06μm diode array module

被引：0
|
作者：
Yao, S [1 ]
Tao, GT [1 ]
Lu, GG [1 ]
Liu, Y [1 ]
Zhang, B [1 ]
Yao, D [1 ]
Wang, LJ [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China
来源：
ICO20: Lasers and Laser Technologies | 2005年 / 6028卷
关键词：
high power; diode array; 1.06 mu m; characteristic temperature;
D O I：
10.1117/12.667132
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper high power diode array module with an emission wavelength of 1.06 mu m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure, Laser bars with a fill factor of 50% are processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20 degrees C to 40 degrees C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20 degrees C. The central wavelength is 1059.4nm..
引用
收藏
页码：G280 / G280
页数：6
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