Development of thick-film thermoelectric microcoolers using electrochemical deposition

被引:30
作者
Fleurial, JP [1 ]
Borshchevsky, A [1 ]
Ryan, MA [1 ]
Phillips, WM [1 ]
Snyder, JG [1 ]
Caillat, T [1 ]
Kolawa, A [1 ]
Herman, JA [1 ]
Mueller, P [1 ]
Nicolet, M [1 ]
机构
[1] Jet Prop Lab, Pasadena, CA 91109 USA
来源
THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS | 1999年 / 545卷
关键词
D O I
10.1557/PROC-545-493
中图分类号
O414.1 [热力学];
学科分类号
摘要
Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 mu m thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/cm(2) over a 30 to 60 K temperature diffrence can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 mu m thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te2.95Se0.05 and p-type Bi0.5Sb1.5Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.
引用
收藏
页码:493 / 500
页数:8
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