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Influence of yttrium doping on the structural, morphological and optical properties of nanostructured ZnO thin films grown by spray pyrolysis
被引:41
作者:
Bazta, O.
[1
,3
]
Urbieta, A.
[2
]
Piqueras, J.
[2
]
Fernandez, P.
[2
]
Addou, M.
[3
]
Calvino, J. J.
[1
]
Hungria, A. B.
[1
]
机构:
[1] Univ Cadiz, Dept Mat Sci & Met Engn & Inorgan Chem, Cadiz, Spain
[2] Univ Complutense Madrid, Dept Phys, Madrid, Spain
[3] Univ Abdelmalek Essaadi FST, Dept Phys, Tangier, Morocco
关键词:
Films;
Optical properties;
ZnO;
Y doped;
Spray pyrolysis;
ZINC-OXIDE;
ELECTRICAL-PROPERTIES;
PHOTOLUMINESCENCE PROPERTIES;
HYDROTHERMAL SYNTHESIS;
AL;
MICROSTRUCTURE;
LUMINESCENCE;
OPTIMIZATION;
TEMPERATURE;
DEPENDENCE;
D O I:
10.1016/j.ceramint.2018.12.178
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
This study reports on the deposition of highly transparent, n-type ZnO thin films on glass substrate at 450 C using spray pyrolysis processing, with the simultaneous insertion of yttrium (Y) at different percentages (0, 2, 5, 7 at%) as a dopant. The effect of Y doping on the structure, morphology and optical properties of Y doped ZnO (ZnO:Y) was investigated for optoelectronic applications. The obtained thin films were characterized by means of X-ray diffraction, field-emission scanning electron microscopy (FESEM), UV visible absorbance measurements, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. The as-prepared films exhibit well-defined hexagonal wurtzite structure grown along [002]. Field emission scanning electron microscope micrographs of the pure ZnO and ZnO:Y showed that the films acquired a dominance of hexagonal-like grains, the morphology was influenced by Y incorporation. All the films showed high transparency in the visible domain with an average transmittance of 83%. The band gap energy, Eg, increased from 3.12 eV to 3.18 eV by increasing the Y doping concentration up to 5 at% and then decreased to 3.15 eV for 7 at% Y content. The PL and CL measurements reveal a strong ultraviolet (UV) emission, suggesting that the as-prepared ZnO:Y thin films can potentially be used in optoelectronic devices.
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页码:6842 / 6852
页数:11
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