Electron spin-orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields

被引：29

作者：

Studenikin, SA ^{[1
]}

Coleridge, PT ^{[1
]}

Yu, G ^{[1
]}

Poole, PJ ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 11期

关键词：

D O I：

10.1088/0268-1242/20/11/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum-well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the Shubnikov-de Haas (SdH) oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields, the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin zeros and WAL measurements.

引用

页码：1103 / 1110

页数：8