Electron spin-orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields

被引:29
|
作者
Studenikin, SA [1 ]
Coleridge, PT [1 ]
Yu, G [1 ]
Poole, PJ [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1088/0268-1242/20/11/001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum-well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the Shubnikov-de Haas (SdH) oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields, the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin zeros and WAL measurements.
引用
收藏
页码:1103 / 1110
页数:8
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