GaInN-Based Tunnel Junctions in n-p-n Light Emitting Diodes

被引：47

作者：

Kaga, Mitsuru ^{[1
]}

Morita, Takatoshi ^{[1
]}

Kuwano, Yuka ^{[1
]}

Yamashita, Kouji ^{[1
]}

Yagi, Kouta ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

VERTICAL-CAVITY LASERS; PIEZOELECTRIC FIELDS; QUANTUM-WELLS; GAN; MG; MECHANISM; DESIGN; ENERGY;

D O I：

10.7567/JJAP.52.08JH06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We optimized p(++)-GaInN/n(++)-GaN tunnel junctions grown on conventional light-emitting diodes, corresponding to n-p-n structures. We investigated two dependences at the tunnel junctions, the InN mole fraction dependence and a doping dependence. The lowest voltage drop at the reverse-biased tunnel junction was 0.68 V at 20mA with a 3nm p(++)-Ga0.8In0.2N (Mg: 1 x 10(20) cm(-3))/30nm n(++)-GaN (Si: 4 x 10(20) cm(-3)) structure. We then found that the Mg memory effect was reasonably suppressed by using the p(++)-GaInN instead of a p(++)-GaN. At the same time, the amount of Si doping in the following n(++)-GaN should be substantially high to overcome the Mg memory effect. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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