Electrical and optical properties of in and Al doped ZnO thin film

被引:16
作者
Park, Sang-Uk [1 ]
Koh, Jung-Hyuk [1 ]
机构
[1] Kwangwoon Univ, Dept Mat Engn, Seoul 139701, South Korea
关键词
ZnO; transparent conductive oxide; sol-gel; PULSED-LASER DEPOSITION; TEMPERATURE;
D O I
10.1007/s13391-013-0046-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, to improve the electrical and optical properties of aluminium (Al) doped zinc oxide thin films, we have added small amounts of indium (In) to Al doped ZnO thin films. We will present the results of In and Al doped ZnO thin film on glass substrates prepared by the sol-gel processing method. A rapid thermal annealing process was applied to cure the thin film properties. Different amounts of In were used to dope the AZO thin films to find the optimum process condition. The effects of crystallinity were analyzed by an x-ray diffraction method. In addition, the optical transmittance and electrical proprties of In doped AZO thin films were investigated.
引用
收藏
页码:493 / 496
页数:4
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