Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping

1.5-mu m-thick (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) relaxor ferroelectric (RFE) films doped by Mn from 0 to 5 mol. % were deposited on LaNiO3/Si(100) substrates via a sol-gel method. The microstructure, dielectric properties, and energy-storage performance of PLZT thin films were investigated as a function of Mn content. X-ray diffraction patterns and scanning electron microscopy indicated that all the films possessed a similar microstructure with pure perovskite phase. However, the dielectric constant, average breakdown fields, and the difference between maximum polarization and remnant polarization of the films were improved by Mn doping. A giant recoverable energy-storage density of 30.8 J/cm(3) was obtained in 1 mol. % Mn-doped films. Moreover, good temperature-dependent energy-storage stability was also observed in the films. These results indicated that Mn-doping was an efficient way to optimize the energy-storage behaviors of PLZT RFE films. (c) 2013 AIP Publishing LLC.