Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping

被引:60
作者
Liu, Yunying [1 ]
Hao, Xihong [2 ]
An, Shengli [2 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Chem & Chem Engn, Baotou 014010, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
基金
中国国家自然科学基金;
关键词
DENSITY; CAPACITORS; TITANATE; POLYMER;
D O I
10.1063/1.4829029
中图分类号
O59 [应用物理学];
学科分类号
摘要
1.5-mu m-thick (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) relaxor ferroelectric (RFE) films doped by Mn from 0 to 5 mol. % were deposited on LaNiO3/Si(100) substrates via a sol-gel method. The microstructure, dielectric properties, and energy-storage performance of PLZT thin films were investigated as a function of Mn content. X-ray diffraction patterns and scanning electron microscopy indicated that all the films possessed a similar microstructure with pure perovskite phase. However, the dielectric constant, average breakdown fields, and the difference between maximum polarization and remnant polarization of the films were improved by Mn doping. A giant recoverable energy-storage density of 30.8 J/cm(3) was obtained in 1 mol. % Mn-doped films. Moreover, good temperature-dependent energy-storage stability was also observed in the films. These results indicated that Mn-doping was an efficient way to optimize the energy-storage behaviors of PLZT RFE films. (c) 2013 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 29 条
[1]   Development of Film-on-Foil Ceramic Dielectrics for Embedded Capacitors for Power Inverters in Electric Drive Vehicles [J].
Balachandran, Uthamalingam ;
Narayanan, Manoj ;
Liu, Shanshan ;
Ma, Beihai .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)
[2]   High field tunneling as a limiting factor of maximum energy density in dielectric energy storage capacitors [J].
Chen, Qin ;
Wang, Yong ;
Zhou, Xin ;
Zhang, Q. M. ;
Zhang, Shihai .
APPLIED PHYSICS LETTERS, 2008, 92 (14)
[3]   A dielectric polymer with high electric energy density and fast discharge speed [J].
Chu, Baojin ;
Zhou, Xin ;
Ren, Kailiang ;
Neese, Bret ;
Lin, Minren ;
Wang, Qing ;
Bauer, F. ;
Zhang, Q. M. .
SCIENCE, 2006, 313 (5785) :334-336
[4]   A Lead-Free and High-Energy Density Ceramic for Energy Storage Applications [J].
Correia, Tatiana M. ;
McMillen, Mark ;
Rokosz, Maciej K. ;
Weaver, Paul M. ;
Gregg, John M. ;
Viola, Giuseppe ;
Cain, Markys G. .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2013, 96 (09) :2699-2702
[5]  
Delfin E. P., 2012, J EUR CERAM SOC, V32, P1659
[6]   Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films [J].
Ge, Jun ;
Pan, Gang ;
Remiens, Denis ;
Chen, Ying ;
Cao, Fei ;
Dong, Xianlin ;
Wang, Genshui .
APPLIED PHYSICS LETTERS, 2012, 101 (11)
[7]   A review on the dielectric materials for high energy-storage application [J].
Hao, Xihong .
JOURNAL OF ADVANCED DIELECTRICS, 2013, 3 (01)
[8]   High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O3 relaxor ferroelectric thin films [J].
Hao, Xihong ;
Wang, Ying ;
Yang, Jichun ;
An, Shengli ;
Xu, Jinbao .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (11)
[9]   Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films [J].
Hao, Xihong ;
Zhou, Jing ;
An, Shengli .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (06) :1647-1650
[10]   Orientation-dependent phase switching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric thin films [J].
Hao, Xihong ;
Zhai, Jiwei ;
Shang, Fei ;
Zhou, Jing ;
An, Shengli .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)