Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping

被引:60
作者
Liu, Yunying [1 ]
Hao, Xihong [2 ]
An, Shengli [2 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Chem & Chem Engn, Baotou 014010, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
基金
中国国家自然科学基金;
关键词
DENSITY; CAPACITORS; TITANATE; POLYMER;
D O I
10.1063/1.4829029
中图分类号
O59 [应用物理学];
学科分类号
摘要
1.5-mu m-thick (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) relaxor ferroelectric (RFE) films doped by Mn from 0 to 5 mol. % were deposited on LaNiO3/Si(100) substrates via a sol-gel method. The microstructure, dielectric properties, and energy-storage performance of PLZT thin films were investigated as a function of Mn content. X-ray diffraction patterns and scanning electron microscopy indicated that all the films possessed a similar microstructure with pure perovskite phase. However, the dielectric constant, average breakdown fields, and the difference between maximum polarization and remnant polarization of the films were improved by Mn doping. A giant recoverable energy-storage density of 30.8 J/cm(3) was obtained in 1 mol. % Mn-doped films. Moreover, good temperature-dependent energy-storage stability was also observed in the films. These results indicated that Mn-doping was an efficient way to optimize the energy-storage behaviors of PLZT RFE films. (c) 2013 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 29 条
  • [1] Development of Film-on-Foil Ceramic Dielectrics for Embedded Capacitors for Power Inverters in Electric Drive Vehicles
    Balachandran, Uthamalingam
    Narayanan, Manoj
    Liu, Shanshan
    Ma, Beihai
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)
  • [2] High field tunneling as a limiting factor of maximum energy density in dielectric energy storage capacitors
    Chen, Qin
    Wang, Yong
    Zhou, Xin
    Zhang, Q. M.
    Zhang, Shihai
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (14)
  • [3] A dielectric polymer with high electric energy density and fast discharge speed
    Chu, Baojin
    Zhou, Xin
    Ren, Kailiang
    Neese, Bret
    Lin, Minren
    Wang, Qing
    Bauer, F.
    Zhang, Q. M.
    [J]. SCIENCE, 2006, 313 (5785) : 334 - 336
  • [4] A Lead-Free and High-Energy Density Ceramic for Energy Storage Applications
    Correia, Tatiana M.
    McMillen, Mark
    Rokosz, Maciej K.
    Weaver, Paul M.
    Gregg, John M.
    Viola, Giuseppe
    Cain, Markys G.
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2013, 96 (09) : 2699 - 2702
  • [5] Delfin E. P., 2012, J EUR CERAM SOC, V32, P1659
  • [6] Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films
    Ge, Jun
    Pan, Gang
    Remiens, Denis
    Chen, Ying
    Cao, Fei
    Dong, Xianlin
    Wang, Genshui
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (11)
  • [7] A review on the dielectric materials for high energy-storage application
    Hao, Xihong
    [J]. JOURNAL OF ADVANCED DIELECTRICS, 2013, 3 (01)
  • [8] High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O3 relaxor ferroelectric thin films
    Hao, Xihong
    Wang, Ying
    Yang, Jichun
    An, Shengli
    Xu, Jinbao
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (11)
  • [9] Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films
    Hao, Xihong
    Zhou, Jing
    An, Shengli
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (06) : 1647 - 1650
  • [10] Orientation-dependent phase switching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric thin films
    Hao, Xihong
    Zhai, Jiwei
    Shang, Fei
    Zhou, Jing
    An, Shengli
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)