A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

被引：0

作者：

Liu, WC

Tsai, JH

Laih, LW

Chen, HR

Cheng, SY

Wang, WC

Lin, PH

Chen, JY

机构：

来源：

1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS | 1996年

关键词：

D O I：

10.1109/COMMAD.1996.610117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with pseudomorphic base structure is presented. Due to the insertion of InGaAs quantum well between emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively.

引用

页码：247 / 250

页数：4