Phase Change Memory: Scaling and Applications

被引：0
作者：
Jeyasingh, Rakesh [1 ]
Liang, Jiale [1 ]
Caldwell, Marissa A. [1 ]
Kuzum, Duygu [1 ]
Wong, H. -S. Philip [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8 - 3.4nm has been demonstrated. Highly scaled (<2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.
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页数：7
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