Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering

被引:167
作者
Beams, Ryan [1 ]
Cancado, Luiz Gustavo [2 ]
Krylyuk, Sergiy [1 ,3 ]
Kalish, Irina [1 ]
Kalanyan, Berc [1 ]
Singh, Arunima K. [1 ]
Choudhary, Kamal [1 ]
Bruma, Alina [1 ]
Vora, Patrick M. [4 ]
Tavazza, Francesca [1 ]
Da-Vydov, Albert V. [1 ]
Stranick, Stephan J. [1 ]
机构
[1] NIST, Mat Measurement Lab, Gaithersburg, MD 20899 USA
[2] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[3] Theiss Res, La Jolla, CA 92037 USA
[4] George Mason Univ, Dept Phys & Astron, Fairfax, VA 22030 USA
基金
美国国家科学基金会;
关键词
two-dimensional material; Raman scattering; second harmonic generation; crystal symmetry; optical spectroscopy; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; SEMICONDUCTOR TRANSITION; SUPERCONDUCTIVITY; MONOLAYER; MODES; STATE; WTE2;
D O I
10.1021/acsnano.6b05127
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We study the crystal symmetry of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is known to be inversion symmetric; however, we find that the inversion symmetry is broken for finite crystals with even numbers of layers, resulting in strong SHG comparable to other transition-metal dichalcogenides. Group theory analysis of the polarization dependence of the Raman signals allows for the definitive assignment of all the Raman modes in 1T' MoTe2 and clears up a discrepancy in the literature. The Raman results were also compared with density functional theory simulations and are in excellent agreement with the layer-dependent variations of the Raman modes. The experimental measurements also determine the relationship between the crystal axes and the polarization dependence of the SHG and Raman scattering, which now allows the anisotropy of polarized SHG or Raman signal to independently determine the crystal orientation.
引用
收藏
页码:9626 / 9636
页数:11
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