Discretization of Electronic States in Large InAsP/InP Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy

被引：18

作者：

Fain, B. ^{[1
]}

Robert-Philip, I. ^{[1
]}

Beveratos, A. ^{[1
]}

David, C. ^{[1
]}

Wang, Z. Z. ^{[1
]}

Sagnes, I. ^{[1
]}

Girard, J. C. ^{[1
]}

机构：

[1] CNRS, LPN, UPR20, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 12期

关键词：

MICROSCOPY; HEIGHT; BAND;

D O I：

10.1103/PhysRevLett.108.126808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The topography and the electronic structure of InAsP/InP quantum dots are probed by cross-sectional scanning tunneling microscopy and spectroscopy. The study of the local density of states in such large quantum dots confirms the discrete nature of the electronic levels whose wave functions are measured by differential conductivity mapping. Because of their large dimensions, the energy separation between the discrete electronic levels is low, allowing for quantization in both the lateral and growth directions as well as the observation of the harmonicity of the dot lateral potential.

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页数：4

相关论文

共 25 条

[1] Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots [J].

Banin, U ;

Cao, YW ;

Katz, D ;

Millo, O .

NATURE, 1999, 400 (6744) :542-544

[2] Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces [J].

de Raad, GJ ;

Bruls, DM ;

Koenraad, PM ;

Wolter, JH .

PHYSICAL REVIEW B, 2002, 66 (19) :1-14

[3] Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy [J].

Dong, Y. ;

Feenstra, R. M. ;

Semtsiv, M. P. ;

Masselink, W. T. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)

[4] Single InAs1-xPx/InP quantum dots as telecommunications-band photon sources [J].

Elvira, D. ;

Hostein, R. ;

Fain, B. ;

Monniello, L. ;

Michon, A. ;

Beaudoin, G. ;

Braive, R. ;

Robert-Philip, I. ;

Abram, I. ;

Sagnes, I. ;

Beveratos, A. .

PHYSICAL REVIEW B, 2011, 84 (19)

[5] Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm [J].

Elvira, D. ;

Michon, A. ;

Fain, B. ;

Patriarche, G. ;

Beaudoin, G. ;

Robert-Philip, I. ;

Vachtomin, Y. ;

Divochiy, A. V. ;

Smirnov, K. V. ;

Gol'tsman, G. N. ;

Sagnes, I. ;

Beveratos, A. .

APPLIED PHYSICS LETTERS, 2010, 97 (13)

[6] Electronic structure of cleaved InAsP/InP(001) quantum dots measured by scanning tunneling spectroscopy [J].

Fain, B. ;

Girard, J. C. ;

Elvira, D. ;

David, C. ;

Beaudoin, G. ;

Beveratos, A. ;

Robert-Philip, I. ;

Sagnes, I. ;

Wang, Z. Z. .

APPLIED PHYSICS LETTERS, 2010, 97 (17)

[7]

Feenstra RM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165204

[8] Low temperature scanning tunneling microscopy wave-function imaging of InAs/GaAs cleaved quantum dots with similar height [J].

Girard, J. C. ;

Lemaitre, A. ;

Miard, A. ;

David, C. ;

Wang, Z. Z. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (02) :891-894

[9] Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes [J].

Grandidier, B ;

Niquet, YM ;

Legrand, B ;

Nys, JP ;

Priester, C ;

Stiévenard, D ;

Gérard, JM ;

Thierry-Mieg, V .

PHYSICAL REVIEW LETTERS, 2000, 85 (05) :1068-1071

[10] Linewidth of resonances in scanning tunneling spectroscopy [J].

Jdira, L. ;

Overgaag, K. ;

Stiufiuc, R. ;

Grandidier, B. ;

Delerue, C. ;

Speller, S. ;

Vanmaekelbergh, D. .

PHYSICAL REVIEW B, 2008, 77 (20)