Characterization of boron-doped tin oxide thin films

被引：8
作者：
Nasser, SA [1 ]
机构：
[1] Cairo Univ, Beni Suef Fac Sci, Dept Phys, Beni Suef, Egypt
来源：
THIN SOLID FILMS | 1999年 / 342卷 / 1-2期
关键词：
preferred orientation planes of microcrystallites; electrical conductivity; optical energy gap; figure of merit;
D O I：
10.1016/S0040-6090(98)01337-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron-doped tin dioxide (SnO2:B) thin films were deposited on glass substrates using a spray pyrolysis technique. Detailed structural, optical and electrical properties of the materials with respect to varying substrate temperature are presented and discussed. The temperature of deposition as well as the degree of doping by boron greatly influenced the preferred orientation of microcrystallites along (211) and (301) planes in polycrystalline films. Optical data are reported at room temperature. The mechanism of conduction in B-doped SnO2 is discussed in relation to the results obtained. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
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收藏
页码：47 / 51
页数：5
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