Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells

被引：7

作者：

Bayu, M. Emha ^{[1
]}

Cham Thi Trinh ^{[2
,3
]}

Takabe, Ryota ^{[1
]}

Yachi, Suguru ^{[1
]}

Toko, Kaoru ^{[1
]}

Usami, Noritaka ^{[2
]}

Suemasu, Takashi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Helmholtz Zentrum Berlin Mat & Energie, Inst Silizium Photovolta, D-12489 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

BASI2; EPITAXIAL-FILMS; MICROCRYSTALLINE SILICON; THIN-FILMS; EFFICIENCY; DEGRADATION; SI(111); CDTE;

D O I：

10.7567/JJAP.56.05DB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

600-nm-thick B-doped p-BaSi2 layers were grown on (111)-oriented n-Si substrates by molecular beam epitaxy, and the dependences of the minority carrier lifetime tau and photoresponsivity on the hole concentration p were investigated. p was varied from 1.4 x 10(16) to 3.9 x 10(18)cm(-3). The highest tau of 2 mu s was obtained for the sample with the lowest p of 1.4 x 10(16)cm(-3), reaching two orders of magnitude higher than that of the sample with the highest p of 3.9 x 10(18)cm-3. The low-concentration-doped sample also exhibited an excellent external quantum efficiency (EQE) as large as 80% at a wavelength of approximately 800nm at a reverse bias voltage of 0.2V. This value is higher than any other EQEs we have ever achieved for BaSi2, showing the great potential of p-BaSi2 as a light absorber in solar cells. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

共 58 条

[1] Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique [J].

Baba, Masakazu ;

Toh, Katsuaki ;

Toko, Kaoru ;

Saito, Noriyuki ;

Yoshizawa, Noriko ;

Jiptner, Karolin ;

Sekiguchi, Takashi ;

Hara, Kosuke O. ;

Usami, Noritaka ;

Suemasu, Takashi .

JOURNAL OF CRYSTAL GROWTH, 2012, 348 (01) :75-79

[2] The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells [J].

Berginski, Michael ;

Huepkes, Juergen ;

Schulte, Melanie ;

Schoepe, Gunnar ;

Stiebig, Helmut ;

Rech, Bernd ;

Wuttig, Matthias .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[3] LIGHT TRAPPING IN TEXTURED SOLAR-CELLS [J].

CAMPBELL, P .

SOLAR ENERGY MATERIALS, 1990, 21 (2-3) :165-172

[4] Optimisation of the Back Surface Reflector for Textured Polycrystalline Si Thin Film Solar Cells [J].

Cui, Hongtao ;

Campbell, Patrick R. ;

Green, Martin A. .

PV ASIA PACIFIC CONFERENCE 2012, 2013, 33 :118-128

[5] Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers [J].

Du, W. ;

Takabe, R. ;

Baba, M. ;

Takeuchi, H. ;

Hara, K. O. ;

Toko, K. ;

Usami, N. ;

Suemasu, T. .

APPLIED PHYSICS LETTERS, 2015, 106 (12)

[6]

Du W., THIN SOLID FIL UNPUB

[7] Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells [J].

Du, Weijie ;

Suzuno, Mitsushi ;

Khan, M. Ajmal ;

Toh, Katsuaki ;

Baba, Masakazu ;

Nakamura, Kotaro ;

Toko, Kaoru ;

Usami, Noritaka ;

Suemasu, Takashi .

APPLIED PHYSICS LETTERS, 2012, 100 (15)

[8]

Fonash SJ, 2010, SOLAR CELL DEVICE PHYSICS, 2ND EDITION, P9, DOI 10.1016/B978-0-12-374774-7.00002-9

[9] Minority carrier lifetime degradation in boron-doped Czochralski silicon [J].

Glunz, SW ;

Rein, S ;

Lee, JY ;

Warta, W .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2397-2404

[10] Degradation of carrier lifetime in Cz silicon solar cells [J].

Glunz, SW ;

Rein, S ;

Warta, W ;

Knobloch, J ;

Wettling, W .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :219-229

← 1 2 3 4 5 6 →