Prediction of Rashba Effect on Two-dimensional MX Monochalcogenides (M = Ge, Sn and X = S, Se, Te) with Buckled Square Lattice

被引:1
作者
Jihad, Ibnu [1 ]
Hendrawan, Juhri [1 ]
Putra, Adam Sukma [1 ]
Triyana, Kuwat [1 ]
Absor, Moh Adhib Ulil [1 ]
机构
[1] Univ Gadjah Mada, Fac Math & Nat Sci, Dept Phys, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
关键词
Ge monochalcogenides; Sn monochalcogenides; DFT method; spintronics; square lattice; Rashba effect; spin textures; SPIN TRANSPORT; GRAPHENE;
D O I
10.22146/ijc.49331
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Gamma and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.
引用
收藏
页码:697 / 704
页数:8
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