pn-junction delineation in Si devices using scanning capacitance spectroscopy

被引：0
作者：
Edwards, H [1 ]
机构：
[1] Texas Instruments Inc, Dallas, TX USA
来源：
ISTFA 2000: PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2000年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：529 / 532
页数：4
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