pn-junction delineation in Si devices using scanning capacitance spectroscopy

被引：0

作者：

Edwards, H ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX USA

来源：

ISTFA 2000: PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：529 / 532

页数：4

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