Fabrication of Cu4SnS4 Thin Films: A Review

被引：0

作者：

Ho, Soon Min ^{[1
]}

机构：

[1] INTI Int Univ, Ctr Amer Educ, Putra Nilai, Negeri Sembilan, Malaysia

来源：

ENGINEERING TECHNOLOGY & APPLIED SCIENCE RESEARCH | 2020年 / 10卷 / 05期

关键词：

copper tin sulfide; thin films; solar cells; band gap; semiconductor; SOLAR-CELLS; ELECTRODEPOSITION; DEPOSITION; SNS; EFFICIENCY; CU2SNS3;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.

引用

页码：6161 / 6164

页数：4

共 36 条

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