Simulation of plasma production and chemical reaction in an oxide deposition apparatus using electron cyclotron resonance plasma

A two-dimensional fluid simulation code is developed which can predict plasma properties and chemical species transport in gas phase in a realistic configuration of a production-line apparatus. The code is applied to an electron cyclotron resonance plasma reactor for oxide deposition on 20-cm wafers. The predicted density in Ar plasma is in good agreement with the experimental result. Two-dimensional distributions of radical densities in plasmas with gas mixtures of Ar/O-2/SiH4 and Ar/O-2/SiF4 are obtained, which are in accordance with the measured deposition rates of SiO2 and SiOxFy, respectively.