An Ultra-Low-Voltage CMOS Process-Insensitive Self-Biased OTA With Rail-to-Rail Input Range

被引:93
作者
Abdelfattah, Omar [1 ]
Roberts, Gordon W. [1 ]
Shih, Ishiang [1 ]
Shih, Yi-Chi [2 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
关键词
Bulk-driven MOS transistor; common-mode rejection; operational transconductance amplifiers; power-supply rejection; process variations; ultra-low voltage; AMPLIFIER;
D O I
10.1109/TCSI.2015.2469011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An operational-transconductance-amplifier (OTA) design for ultra-low voltage ultra-low power applications is proposed. The input stage of the proposed OTA utilizes a bulk-driven pseudo-differential pair to allow minimum supply voltage while achieving a rail-to-rail input range. All the transistors in the proposed OTA operate in the subthreshold region. Using a novel self-biasing technique to bias the OTA obviates the need for extra biasing circuitry and enhances the performance of the OTA. The proposed technique ensures the OTA robustness to process variations and increases design feasibility under ultra-low-voltage conditions. Moreover, the proposed biasing technique significantly improves the common-mode and power-supply rejection of the OTA. To further enhance the bandwidth and allow the use of smaller compensation capacitors, a compensation network based on a damping-factor control circuit is exploited. The OTA is fabricated in a 65 nm CMOS technology. Measurement results show that the OTA provides a low-frequency gain of 46 dB and rail-to-rail input common-mode range with a supply voltage as low as 0.5 V. The dc gain of the OTA is greater than 42 dB for supply voltage as low as 0.35 V. The power dissipation is 182 mu W at V-DD = 0.5 V and 17 mu W at V-DD = 0.35 V.
引用
收藏
页码:2380 / 2390
页数:11
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