Electrical Properties and Microstructures of Tb4O7-doped Bi4Ti3O12 Ceramics

被引：0

作者：

Mei, X. A. ^{[1
]}

Chen, M. ^{[1
]}

Liu, R. F. ^{[1
]}

Huang, C. Q. ^{[1
]}

Liu, J. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang 414000, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS VII, PTS 1 AND 2 | 2012年 / 512-515卷

关键词：

Microstructure; Impedance; Electrical property; Bismuth titanate; BISMUTH TITANATE; THIN-FILMS; CAPACITORS;

D O I：

10.4028/www.scientific.net/KEM.512-515.1329

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of Tb4O7-bismuth titanate (Bi3.3Tb0.6Ti3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Tb-doped sample exhibit randomly oriented and plate-like morphology.

引用

页码：1329 / 1332

页数：4

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