SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz

被引：19

作者：

Asadi, Mohammad Javad ^{[1
]}

Li, Lei ^{[1
]}

Zhao, Wenwen ^{[2
]}

Nomoto, Kazuki ^{[1
]}

Fay, Patrick ^{[3
]}

Xing, Huili Grace ^{[1
,4
,5
]}

Jena, Debdeep ^{[1
,4
,5
]}

Hwang, James C. M. ^{[4
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA

[2] Cornell Univ, Dept Engn & Appl Phys, Ithaca, NY 14850 USA

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[5] Cornell Univ, Kavli Inst Nanosci, Ithaca, NY 14853 USA

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2021年

关键词：

cavity resonators; microwave filters; millimeter wave integrated circuits; semiconductor waveguides; MILLIMETER;

D O I：

10.1109/IMS19712.2021.9574845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Substrate-integrated waveguides (SIWs) of different geometry are designed, fabricated, and measured on a SiC wafer, along with SIW-based resonators, SIW-based filters, grounded coplanar waveguides (GCPWs), GCPW-SIW transitions, and calibration structures. Two-tier calibration is used to extract the intrinsic SIW characteristics from GCPW-probed scattering parameters. The resulted D-band (110.170 GHz) SIWs exhibit a record low insertion loss of 0.22 +/- 0.04 dB/mm, which is four times better than that of the GCPWs. A 3-pole filter exhibits a 1.0-dB insertion loss and a 25-dB return loss at 135 GHz, which represents the state of the art of SiC SIW filters and is order-of-magnitude better than Si on-chip filters. These results show the promise of SIWs for integrating HEMTs, filters, antennas, and other circuit elements on the same SiC chip.

引用

页码：669 / 672

页数：4

共 25 条

[1]

[Anonymous], 2011, THESIS U TORONTO TOR

[2]

Barker A., 2013, CS MANTECH C, P47

[3]

Bertrand M, 2018, IEEE MTT S INT MICR, P875, DOI 10.1109/MWSYM.2018.8439287

[4]

Cameron RJ., 2018, MICROWAVE FILTERS CO