Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes

被引：13

作者：

Chung, Roy Byung-Kyu ^{[1
]}

Kim, Donghyun ^{[2
]}

Lim, Sung-Keun ^{[2
]}

Choi, Jun-Sung ^{[2
]}

Kim, Kyoung-Jun ^{[2
]}

Lee, Bo-Hyun ^{[1
]}

Jung, Kyung Sub ^{[2
]}

Kim-Lee, Hyun-Joon ^{[2
]}

Lee, Won Jo ^{[2
]}

Park, Bongmo ^{[1
]}

Woo, Kwangje ^{[2
]}

机构：

[1] Samsung Corning Precis Mat Co Ltd, R&D Ctr, Asan 336725, Chungnam, South Korea

[2] Samsung Corning Precis Mat Co Ltd, New Business Div, Asan 336725, Chungnam, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

关键词：

SILICON-WAFERS; DEVICES; TECHNOLOGY; CRYSTALS; GROWTH;

D O I：

10.7567/APEX.6.111005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layer transfer via ion-cut has been developed for GaN to fabricate multiple templates from a high-quality GaN wafer without compromising the crystallinity. Here, we report on the successful fabrication of 4-in. layer-transferred GaN on sapphire. A high quality epitaxial layer is also successfully grown despite the structural degradation in the transferred layer by hydrogen implantation. Fully packaged vertical light-emitting diodes grown on the template exhibit the peak external quantum efficiency of 48.6% and optical output power of 1.8W at 220 A/cm(2), suggesting that the template could serve as a low-cost substrate for high-performance nitride devices. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 23 条

[1] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].

BRUEL, M .

ELECTRONICS LETTERS, 1995, 31 (14) :1201-1202

[2] Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices [J].

Chung, Kunook ;

Lee, Chul-Ho ;

Yi, Gyu-Chul .

SCIENCE, 2010, 330 (6004) :655-657

[3] Bulk GaN based violet light-emitting diodes with high efficiency at very high current density [J].

Cich, Michael J. ;

Aldaz, Rafael I. ;

Chakraborty, Arpan ;

David, Aurelien ;

Grundmann, Michael J. ;

Tyagi, Anurag ;

Zhang, Meng ;

Steranka, Frank M. ;

Krames, Michael R. .

APPLIED PHYSICS LETTERS, 2012, 101 (22)

[4] On the mechanism of blistering phenomenon in high temperature H-implanted GaN [J].

Dadwal, U. ;

Singh, R. .

APPLIED PHYSICS LETTERS, 2013, 102 (08)

[5] Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities [J].

Dai, Q. ;

Schubert, M. F. ;

Kim, M. H. ;

Kim, J. K. ;

Schubert, E. F. ;

Koleske, D. D. ;

Crawford, M. H. ;

Lee, S. R. ;

Fischer, A. J. ;

Thaler, G. ;

Banas, M. A. .

APPLIED PHYSICS LETTERS, 2009, 94 (11)

[6] Ammonothermal GaN substrates: Growth accomplishments and applications [J].

Dwilinski, Robert ;

Doradzinski, Roman ;

Garczynski, Jerzy ;

Sierzputowski, Leszek ;

Kucharski, Robert ;

Zajac, Marcin ;

Rudzinski, Mariusz ;

Kudrawiec, Robert ;

Strupinski, Wlodzimierz ;

Misiewicz, Jan .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07) :1489-1493

[7] Bulk GaN crystals grown by HVPE [J].

Fujito, Kenji ;

Kubo, Shuichi ;

Nagaoka, Hirobumi ;

Mochizuki, Tae ;

Namita, Hideo ;

Nagao, Satoru .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3011-3014

[8] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 [J].

Gardner, N. F. ;

Mueller, G. O. ;

Shen, Y. C. ;

Chen, G. ;

Watanabe, S. ;

Gotz, W. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[9] Rotational grinding of silicon wafers-sub-surface damage inspection [J].

Haapalinna, A ;

Nevas, S ;

Pähler, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 107 (03) :321-331

[10] Layered boron nitride as a release layer for mechanical transfer of GaN-based devices [J].

Kobayashi, Yasuyuki ;

Kumakura, Kazuhide ;

Akasaka, Tetsuya ;

Makimoto, Toshiki .

NATURE, 2012, 484 (7393) :223-227

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