Piezoelectric Field-Effect Transistors with Sub-Thermal Swing

被引：0

作者：

Wang, Hongjuan ^{[1
]}

Long, Yuxiong ^{[1
]}

Jiang, Xiangwei ^{[1
]}

Han, Genquan ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian, Shaanxi, Peoples R China

来源：

2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年

关键词：

Piezoelectric; Strain; GAA; Band edge shift;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sub-thermal swing characteristic in piezoelectric FETs is theoretically investigated. Analytical models are utilized to explore the gate voltage (VG) modulated strain, conduction band edge shift Delta E-nu and SS. The previously neglected impact of strain induced metal work function (Phi(M)) and effective masses modulation is thoroughly discussed. And the impact of crystal orientation on strain induced SS performance enhancement in III-V materials is considered, demonstrating that the [111] is the best to obtain the larger stress and Delta E-nu. A new device structure, Piezo-PillarFET was proposed to achieve the minimum SS for a given material system.

引用

页数：3

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