Graphene Growth and Device Integration

被引：51
作者：
Colombo, Luigi [1 ]
Wallace, Robert M. [2 ]
Ruoff, Rodney S. [3 ]
机构：
[1] Texas Instruments Inc, Dallas, TX 75243 USA
[2] Univ Texas Dallas, Richardson, TX 75080 USA
[3] Univ Texas Austin, Austin, TX 78712 USA
来源：
PROCEEDINGS OF THE IEEE | 2013年 / 101卷 / 07期
基金：
美国国家科学基金会;
关键词：
Chemical vapor deposition (CVD); electrochemical transfer; graphene; mobility; Raman spectroscopy; X-ray photoelectron spectroscopy; ATOMIC LAYER DEPOSITION; FIELD-EFFECT TRANSISTORS; BILAYER GRAPHENE; BORON-NITRIDE; ELECTRONIC-STRUCTURE; EPITAXIAL GRAPHENE; HIGH-QUALITY; TRANSPORT-PROPERTIES; CURRENT SATURATION; CARBON NANOTUBES;
D O I：
10.1109/JPROC.2013.2260114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international road-map, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.
引用
收藏
页码：1536 / 1556
页数：21
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