Improved cut-off frequency for cylindrical gate TFET using source delta doping

The radio-frequency (RF) performance of delta-doped cylindrical gate Tunnel FET (DCG-TFET) has been investigated and compared with conventional CG-TFET in terms of total gate capacitance, transconductance and cut-off frequency. Because of the higher transconductance due to insertion of delta-doping sheet in the source region, the DCG-TFET model exhibit higher cut-off frequency and smaller intrinsic delay. The impact of variation in gate oxide thickness and silicon pillar diameter on cut-off frequency has also been discussed for the model. The achievement of high cut-off frequency enables the model to be part of a solution in high frequency application. However the RF parameters have been extracted using 2D TCAD device simulator from Synopsis. (C) 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license.