DBL model for GaAs-based solar cells in different outdoor conditions

被引：2

作者：

Mohammadnejad, S. ^{[1
]}

Abkenar, Nima Jouyandeh ^{[1
]}

Bahrami, A. ^{[1
]}

机构：

[1] Iran Univ Sci & Technol, Nanoptron Res Ctr, Dept Elect & Elect Engn, Tehran, Iran

来源：

INDIAN JOURNAL OF PHYSICS | 2013年 / 87卷 / 10期

关键词：

Detailed balance limit; Solar cell; GaAs; Efficiency; DETAILED BALANCE LIMIT; EFFICIENCY; SEMICONDUCTORS; GAP;

D O I：

10.1007/s12648-013-0326-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we have used detailed balance limit model in order to achieve optimum single junction solar cell for different outdoor conditions. Also, maximum achievable efficiency for GaAs-based double junction solar cells has been calculated and effects of the concentration ratio on optimum point have been investigated. Although 1.9/1.0 eV is achieved as the optimum combination of band gaps for double junction solar cells, but simulation results show some changes in value of top cell's optimum band gap when the GaAs is used as bottom cell. Finally, effect of changing temperature on behavior of GaAs-based double junction solar cell has been studied under 1sun black body, AM0 and AM1.5 spectrums.

引用

页码：971 / 976

页数：6

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