A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

被引：162

作者：

Chen, An ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, Sunnyvale, CA 94085 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 04期

关键词：

Crossbar array; line resistance; memory; nonlinearity; select devices;

D O I：

10.1109/TED.2013.2246791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.

引用

页码：1318 / 1326

页数：9

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