An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design

被引：139

作者：

Ghosh, Pujarini ^{[1
]}

Haldar, Subhasis ^{[2
]}

Gupta, R. S. ^{[3
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India

[3] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, New Delhi 110086, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 12期

关键词：

ATLAS; cylindrical-gate (CGT) MOSFET; gate material engineering (GME); single metal gate (SMG); AMPLIFIER; DRAIN;

D O I：

10.1109/TED.2012.2219537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an extensive study on the intermodulation distortion and the linearity of gate-material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the influence of technology variations such as channel length and gate material workfunction variations is explored using an ATLAS 3-D device simulator. The simulation results reveal that the GME CGT MOSFET design displays a significant enhancement in the device's linearity and intermodulation distortion performance in terms of the figure-of-merit metrics VIP2, VIP3, IIP3, and IMD3 and the higher order transconductance coefficients g(m1), g(m2), and g(m3). The results are, thus, useful for optimizing the device bias point for RFIC design with higher efficiency and better linearity performance.

引用

页码：3263 / 3268

页数：6

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