Determination of silicon wafer site flatness using dual heterodyne interferometers with sub-nanometer precision

被引：5

作者：

Tahara, Kazuhiko ^{[1
,2
]}

Matsuoka, Hideki ^{[1
]}

Morioka, Noritaka ^{[1
]}

Tsunaki, Hidetoshi ^{[1
]}

Kannaka, Masato ^{[1
,3
]}

Kita, Takashi ^{[2
]}

机构：

[1] Kobelco Res Inst Inc, LEO Business, Nishi Ku, 1-5-5 Tahatsukadai, Kobe, Hyogo 6512271, Japan

[2] Kobe Univ, Dept Elect & Elect Engn, Grad Sch Engn, Nada Ku, 1-1 Rokkodai, Kobe, Hyogo 6578501, Japan

[3] Kobe Steel Ltd, Prod Syst Res Lab, Nishi Ku, 1-5-5 Tahatsukadai, Kobe, Hyogo 6512271, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2020年 / 91卷 / 06期

关键词：

THICKNESS;

D O I：

10.1063/1.5143534

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Precise measurement of wafer flatness with high sensitivity and high spatial resolution is essential to realize high yields in nano-scale lithography because the depth of focus in this technology is relatively small. We report on a highly precise site flatness measurement system that employs a pair of heterodyne interferometers and achieves sub-nanometer precision for polished 300-mm silicon wafers. The determined overall mean standard deviation for the site flatness front-surface least-squares fit range is 0.21 nm. Furthermore, this system allows us to obtain images of the wafer flatness via scanning with a high spatial resolution of approximately 12 mu m. These results suggest that the heterodyne interferometer-based system is a suited candidate for use at the next-generation 16-nm half-pitch technology node.

引用

页数：5

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