High-frequency gate manipulation of a bilayer graphene quantum dot

被引：12

作者：

Droescher, S. ^{[1
]}

Guettinger, J. ^{[1
]}

Mathis, T. ^{[1
]}

Batlogg, B. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

基金：

瑞士国家科学基金会;

关键词：

Gate dielectrics - Quantum chemistry - Graphene - Semiconductor quantum dots;

D O I：

10.1063/1.4737937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop (TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737937]

引用

页数：4

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