Grinding Characteristics of Reaction Bonded Silicon Carbide

被引：1
作者：
Yao Wang [1 ]
Zhang Yu-Min [2 ]
Han Jie-Cai [2 ]
Zhou Yu-Feng [2 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Weihai 264200, Peoples R China
[2] Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150001, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2012年 / 27卷 / 07期
关键词：
SiC; grinding; residual stress; crack; bending strength; RESIDUAL-STRESS; BENDING STRENGTH; DAMAGE;
D O I：
10.3724/SP.J.1077.2012.11514
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Surface topography, surface residual stress and bending strength of RBSiC ground using diamond wheel were studied. Grinding RBSiC is removed mainly by brittle fracture and lightly by ductile cutting. With the increase of down feed, surface roughness R-a increases. Burnishing with no down feed can improve the R-a in some way. With increasing down feed, the compressive residual stress decreases because of an inadequately cooling effect. Compare with the specimens grounded using 0.9 mu m/s, those using down feed of 1.35 mu m/s have worse surface quality. Considering both the processing efficiency and the surface quality, the optimum parameters are as follow: 0.9 mu m/s down feed, 2.1 r/min work table rotational speed and 1 min burnishing.
引用
收藏
页码：764 / 768
页数：5
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