机构:
IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
Max Planck Res Grp Dynam Nanoelect Syst, Ctr Free Electron Laser Sci, Hamburg, Germany
Max Planck Inst Solid State Res, Stuttgart, GermanyIBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
Loth, Sebastian
[1
,2
,3
]
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机构:
Baumann, Susanne
[1
,4
]
Lutz, Christopher P.
论文数: 0引用数: 0
h-index: 0
机构:
IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USAIBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
Lutz, Christopher P.
[1
]
Eigler, D. M.
论文数: 0引用数: 0
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机构:
IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USAIBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
Eigler, D. M.
[1
]
Heinrich, Andreas J.
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IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USAIBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
Heinrich, Andreas J.
[1
]
机构:
[1] IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
[2] Max Planck Res Grp Dynam Nanoelect Syst, Ctr Free Electron Laser Sci, Hamburg, Germany
[3] Max Planck Inst Solid State Res, Stuttgart, Germany
Control of magnetism on the atomic scale is becoming essential as data storage devices are miniaturized. We show that antiferromagnetic nanostructures, composed of just a few Fe atoms on a surface, exhibit two magnetic states, the Neel states, that are stable for hours at low temperature. For the smallest structures, we observed transitions between Neel states due to quantum tunneling of magnetization. We sensed the magnetic states of the designed structures using spin-polarized tunneling and switched between them electrically with nanosecond speed. Tailoring the properties of neighboring antiferromagnetic nanostructures enables a low-temperature demonstration of dense nonvolatile storage of information.