Structural and electronic properties of wide band gap Zn1-xMgxSe alloys

被引：6
|
作者：
Pelucchi, E [7 ]
Rubini, S
Bonanni, B
Franciosi, A
Zaoui, A
Peressi, M
Baldereschi, A
De Salvador, D
Berti, M
Drigo, A
Romanato, F
机构：
[1] Lab Nazl TASC INFM, I-34012 Trieste, Italy
[2] Univ Trieste, Dipartimento Fis Teor, INFM, I-34014 Trieste, Italy
[3] INFM, I-35131 Padua, Italy
[4] Dipartimento Fis G Galilei, I-35131 Padua, Italy
[5] Elettra Synchrotron, TASC INFM, I-34012 Trieste, Italy
[6] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy
[7] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 08期
关键词：
D O I：
10.1063/1.1682688
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We determined the properties of Zn1-xMgxSe semiconductor alloys through a combination of optical and photoelectron spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry, and ab initio pseudopotential calculations. The complementary character of the techniques and the good agreement between calculated and experimental trends allowed us to explain some of the discrepancies between the reported properties of these wide band gap alloys. (C) 2004 American Institute of Physics.
引用
收藏
页码：4184 / 4192
页数：9
相关论文
共 50 条
  • [1] Electronic, elastic and optical properties on the Zn1-xMgxSe mixed alloys
    Surucu, G.
    Colakoglu, K.
    Deligoz, E.
    Ciftci, Y.
    Korozlu, N.
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (04) : 1007 - 1014
  • [2] Predicted electronic properties of zinc-blende Zn1-xMgxSe alloys
    Charifi, Z
    Baaziz, H
    Bouarissa, N
    MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (2-3) : 273 - 278
  • [3] Luminescence of Zn1-xMgxSe, Zn1-xMgxSe:Al and Zn1-xMgxSe:I mixed crystals grown by Bridgman method
    Firszt, F
    Legowski, S
    Meczynska, H
    Oczkowski, HL
    Osinska, W
    Szatkowski, J
    Paszkowicz, W
    Spolnik, ZM
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 167 - 170
  • [4] Nonlinear optical properties of Zn1-xMgxSe and Cd1-xMgxSe crystals
    Derkowska, B.
    Essaidi, Z.
    Sahraoui, B.
    Marasek, A.
    Firszt, F.
    Kujawa, M.
    OPTICAL MATERIALS, 2009, 31 (03) : 518 - 522
  • [5] Properties of the nitrogen acceptor in Zn1-xMgxSe alloys with varying Mg concentration
    Morhain, C
    Seghier, D
    Vögele, B
    O'Donnell, C
    Prior, KA
    Cavenett, BC
    Gislason, HP
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 482 - 486
  • [6] Structural and optical properties of Zn1-xMgxSe alloys grown on GaAs(001) substrates by molecular beam epitaxy
    Huang, DM
    Wang, XJ
    Wei, YF
    Liu, XH
    Wang, J
    Wang, X
    Chen, ZG
    Lu, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1085 - 1089
  • [7] Calculation of the optical and electronic properties of the zinc-blende alloy Zn1-xMgxSe
    Benkabou, F
    Aourag, H
    Certier, M
    Kobayasi, T
    SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (01) : 9 - 19
  • [8] Structure and physical properties of Zn1-xMgxSe single crystals
    Zagoruiko, YA
    Fedorenko, OA
    Kovalenko, NO
    Rom, MA
    Chugai, ON
    Mateychenko, PV
    MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS, 1999, 3794 : 96 - 104
  • [9] Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys
    Lee, H
    Kim, IY
    Powell, J
    Aspnes, DE
    Lee, S
    Peiris, F
    Furdyna, JK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) : 1012 - 1016
  • [10] E(0) band-gap energy and lattice constant of ternary Zn1-xMgxSe as functions of composition
    Jobst, B
    Hommel, D
    Lunz, U
    Gerhard, T
    Landwehr, G
    APPLIED PHYSICS LETTERS, 1996, 69 (01) : 97 - 99
12345