Temperature dependent growth of pulsed laser deposited Bi films on BaF2(111)

被引：6

作者：

Dauscher, A ^{[1
]}

Jacquot, A ^{[1
]}

Lenoir, B ^{[1
]}

机构：

[1] Ecole Mines, Phys Mat Lab, UMR CNRS, INPL,UHP 7556, F-54042 Nancy, France

来源：

APPLIED SURFACE SCIENCE | 2002年 / 186卷 / 1-4期

关键词：

pulsed laser deposition; bismuth films; BaF2; scanning electron microscopy;

D O I：

10.1016/S0169-4332(01)00759-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bismuth films have been deposited in vacuum on BaF2(1 1 1) substrates by a pulsed Nd:YAG laser (lambda = 532 nm). The morphology and crystallographic orientation of the Bi layers have been investigated by scanning electron microscopy and Xray diffraction, respectively, as a function of different parameters: (i) the deposition temperature (75-260 degreesC) (ii) the location of the substrate with regard to the center of the ablation plume: (iii) an annealing treatment. The rnicrostructure is found to strongly depend on these deposition parameters. Thus, by simply changing the experimental conditions, it is possible to achieve highly textured films of a given orientation. This is crucial for optimal applications of bismuth films, as the physical properties of bismuth are anisotropic. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：513 / 520

页数：8

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