Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

被引：6

作者：

Bonera, Emiliano ^{[1
,2
]}

Gatti, Riccardo ^{[1
,2
,3
]}

Isella, Giovanni ^{[4
,5
]}

Norga, Gerd ^{[4
,5
]}

Picco, Andrea ^{[1
,2
]}

Grilli, Emanuele ^{[1
,2
]}

Guzzi, Mario ^{[1
,2
]}

Texier, Michael ^{[6
]}

Pichaud, Bernard ^{[6
]}

von Kaenel, Hans ^{[4
,5
]}

Miglio, Leo ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, LNESS, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] CNRS ONERA, Lab Etud Microstruct, F-92322 Chatillon, France

[4] L NESS, I-22100 Como, Italy

[5] Politecn Milan, Polo Reg Como, I-22100 Como, Italy

[6] Aix Marseille Univ, IM2NP, UMR CNRS 7334, Fac Sci & Tech St Jerome, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

关键词：

RELAXATION;

D O I：

10.1063/1.4817071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1-xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1-xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1-xGex/Si interface. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 20 条

[11] RELAXATION OF SIGE THIN-FILMS GROWN ON SI/SIO2 SUBSTRATES
LEGOUES, FK
POWELL, A
IYER, SS
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7240 - 7246
[12] NEW APPROACH TO GROW PSEUDOMORPHIC STRUCTURES OVER THE CRITICAL THICKNESS
LO, YH
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2311 - 2313
[13] Mura T., 1987, Micromechanics of Defects in Solids, DOI 10.1007/978-94-009-3489-4_3
[14] NABARRO FRN, 1951, PHILOS MAG, V42, P1224
[15] Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures
Pezzoli, F.
Bonera, E.
Grilli, E.
Guzzi, M.
Sanguinetti, S.
Chrastina, D.
Isella, G.
von Kaenel, H.
Wintersberger, E.
Stangl, J.
Bauer, G.
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (5-6) : 279 - 284
[16] Phonon strain shift coefficients in Si1-xGex alloys
Pezzoli, F.
Bonera, E.
Grilli, E.
Guzzi, M.
Sanguinetti, S.
Chrastina, D.
Isella, G.
von Kaenel, H.
Wintersberger, E.
Stangl, J.
Bauer, G.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[17] Raman efficiency in SiGe alloys
Picco, A.
Bonera, E.
Grilli, E.
Guzzi, M.
Giarola, M.
Mariotto, G.
Chrastina, D.
Isella, G.
[J]. PHYSICAL REVIEW B, 2010, 82 (11):
[18] SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study
Rehder, EM
Inoki, CK
Kuan, TS
Kuech, TF
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) : 7892 - 7903
[19] Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition
Rosenblad, C
Deller, HR
Dommann, A
Meyer, T
Schroeter, P
von Kanel, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (05): : 2785 - 2790
[20] SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity
Stoffel, M.
Malachias, A.
Merdzhanova, T.
Cavallo, F.
Isella, G.
Chrastina, D.
von Kaenel, H.
Rastelli, A.
Schmidt, O. G.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) : 085021

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