Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

被引：6

作者：

Bonera, Emiliano ^{[1
,2
]}

Gatti, Riccardo ^{[1
,2
,3
]}

Isella, Giovanni ^{[4
,5
]}

Norga, Gerd ^{[4
,5
]}

Picco, Andrea ^{[1
,2
]}

Grilli, Emanuele ^{[1
,2
]}

Guzzi, Mario ^{[1
,2
]}

Texier, Michael ^{[6
]}

Pichaud, Bernard ^{[6
]}

von Kaenel, Hans ^{[4
,5
]}

Miglio, Leo ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, LNESS, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] CNRS ONERA, Lab Etud Microstruct, F-92322 Chatillon, France

[4] L NESS, I-22100 Como, Italy

[5] Politecn Milan, Polo Reg Como, I-22100 Como, Italy

[6] Aix Marseille Univ, IM2NP, UMR CNRS 7334, Fac Sci & Tech St Jerome, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

关键词：

RELAXATION;

D O I：

10.1063/1.4817071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1-xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1-xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1-xGex/Si interface. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 20 条

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