Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

被引:107
作者
Wheeler, Lance M. [1 ]
Neale, Nathan R. [2 ]
Chen, Ting [3 ]
Kortshagen, Uwe R. [1 ]
机构
[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
ELECTRICAL-PROPERTIES; SEMICONDUCTOR; PHOSPHORUS; PARAMETERS; LIGANDS; SOLIDS; LIQUID;
D O I
10.1038/ncomms3197
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals.
引用
收藏
页数:10
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