Interface Engineering in Organic Thin Film Transistors

被引:0
|
作者
Liguori, R. [1 ]
Fusco, S. [1 ]
Rubino, A. [1 ]
Usta, H. [2 ]
Facchetti, A. [3 ,4 ]
机构
[1] Univ Salerno, Dept Ind Engn, Via Giovanni Paolo 2,132, I-84084 Fisciano, SA, Italy
[2] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, TR-38080 Kayseri, Turkey
[3] Flexterra Corp, Skokie, IL 60077 USA
[4] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
来源
2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION | 2017年
关键词
organic thin-film transistors (OTFTs); semiconductor-insulator interfaces; semiconductor-metal interfaces; trap-limited charge transport; SEMICONDUCTOR; PENTACENE; CIRCUITS; CHARGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.
引用
收藏
页码:143 / 146
页数:4
相关论文
共 50 条
  • [1] Insights Into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor
    Liguori, Rosalba
    Usta, Hakan
    Fusco, Sandra
    Facchetti, Antonio
    Licciardo, Gian Domenico
    Di Benedetto, Luigi
    Rubino, Alfredo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (05) : 2338 - 2344
  • [2] A review on diverse streams of interface engineering for organic thin-film transistors
    Kwon, Jin-Hyuk
    Kim, Min-Hoi
    Bae, Jin-Hyuk
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 12 (01) : 29 - 49
  • [3] Interface Engineering of Semiconductor/Dielectric Heterojunctions toward Functional Organic Thin-Film Transistors
    Zhang, Hongtao
    Guo, Xuefeng
    Hui, Jingshu
    Hu, Shuxin
    Xu, Wei
    Zhu, Daoben
    NANO LETTERS, 2011, 11 (11) : 4939 - 4946
  • [4] Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors
    Khassanov, Artoem
    Schmaltz, Thomas
    Steinrueck, Hans-Georg
    Magerl, Andreas
    Hirsch, Andreas
    Halik, Marcus
    ADVANCED MATERIALS INTERFACES, 2014, 1 (09):
  • [5] Photoemission spectroscopy study of the interface formation in organic thin film transistors
    Watkins, NJ
    Yan, L
    Zorba, S
    Gao, YL
    ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES VI, 2002, 4800 : 192 - 199
  • [6] Study on the characteristics of metal-organic interface for organic thin-film transistors
    Park, J
    Choi, JS
    SYNTHETIC METALS, 2005, 155 (03) : 657 - 661
  • [7] Organic thin-film transistors on plastic substrates
    Lim, SC
    Kim, SH
    Lee, JH
    Yu, HY
    Park, Y
    Kim, D
    Zyung, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 121 (03): : 211 - 215
  • [8] On the crucial role of the insulator-semiconductor interface in organic thin-film transistors
    Horowitz, Gilles
    Mottaghi, Mohammad
    Lang, Philippe
    Rodriguez, Fernand
    Yassar, Abderrahim
    Lenfant, Stephane
    Vuillaume, Dominique
    ORGANIC FIELD-EFFECT TRANSISTORS V, 2006, 6336
  • [9] Electrical in-situ characterisation of interface stabilised organic thin-film transistors
    Striedinger, Bernd
    Fian, Alexander
    Petritz, Andreas
    Lassnig, Roman
    Winkler, Adolf
    Stadlober, Barbara
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (07): : 420 - 424
  • [10] Effect of pentacene thickness on organic thin film transistors: Role of pentacene/insulator interface
    Gupta, Dipti
    Katiyar, M.
    Deepak
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 594 - 597