GW self-energy correction to the band mass of nitride semiconductors

被引：0

作者：

Oshikiri, M

Aryasetiawan, F

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050003, Japan

[2] Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 228卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200111)228:2<567::AID-PSSB567>3.0.CO;2-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effective masses of nitride semiconductors obtained by the local density approximation have been corrected by taking into account the dynamical screening effect, which has been calculated by the so-called GW self-energy calculated within the GW approximation. The obtained correction factors would be very useful for device design technology.

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页码：567 / 570

页数：4

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